Mo optoelectronics fa'avae silicons, photodetectors silicon(Si photodetector)

Mo optoelectronics fa'avae silicon, photodetectors silicon

Photo detectorsliliu faailo moli i faailo eletise, ma aʻo faʻaauau pea ona faʻaleleia le faʻaliliuga o faʻamatalaga, o photodetectors maualuga-saoasaoa faʻatasi ma faʻapipiʻi optoelectronics faʻavae silicon ua avea ma ki i nofoaga autu o faʻamatalaga ma fesoʻotaʻiga fesoʻotaʻiga. O lenei tusiga o le a tuʻuina atu se faʻamatalaga lautele o ata faʻataʻitaʻiga maualuga maualuga, faʻatasi ai ma le faʻamamafa ile germanium faʻavae silicon (Ge poʻo Si photodetector)fa'ata'ita'i ata silikonimo le tu'ufa'atasia o tekonolosi optoelectronics.

O le Germanium o se mea manaia mo le su'esu'eina o moli infrared lata ane i luga o fa'amaufa'ailoga silicon ona e fetaui ma faiga CMOS ma e matua'i malosi lona fa'aulu ile galu o feso'otaiga. Le sili ona taatele Ge / Si photodetector fausaga o le pine diode, lea o le germanium intrinsic o loʻo faʻapipiʻiina i le va o P-ituaiga ma N-ituaiga itulagi.

Fa'atulagaina o masini Ata 1 o lo'o fa'aalia ai se pine tu'usa'o masani Ge po'oO le photodetectorfausaga:

O vaega autu e aofia ai: germanium absorbing layer totō i luga o le silicon substrate; Fa'aaogaina e aoina ai p ma n feso'ota'iga o ave fe'avea'i; Fa'atasiga ta'iala mo le malamalama lelei.

Epitaxial tuputupu aʻe: O le tuputupu aʻe maualuga germanium i luga o le silicon e luitauina ona o le 4.2% lattice le fetaui i le va o mea e lua. E masani ona faʻaaogaina se faʻagasologa e lua-laasaga: maualalo le vevela (300-400°C) faʻapipiʻi faʻapipiʻi ma le maualuga o le vevela (i luga aʻe o le 600°C) le tuʻuina o le germanium. O lenei metotia e fesoasoani e fa'atonutonuina le fe'ese'esea'i o filo e mafua mai le lattice le fetaui. Fa'ato'a fa'atupuina fa'ama'i ile 800-900°C e fa'aitiitia atili ai le fa'a'ese'ese o filo i le tusa ma le 10^7 cm^-2. Uiga faʻatinoga: O le sili ona maualuga Ge / Si PIN photodetector e mafai ona ausia: tali,> 0.8A / W i le 1550 nm; Bandwidth,>60 GHz; Pogisa le taimi nei, <1 μA i le -1 V fa'aituau.

 

Tu'ufa'atasiga fa'atasi ma fa'avae optoelectronics fa'avae silicon

O le tuufaatasia ofa'ata'ita'i saosaoa maualugafa'atasi ai ma fa'atonuga optoelectronics fa'avae silicon e mafai ai ona fa'asolo atu i luga o mata ma feso'ota'iga. O auala autu e lua o le tuʻufaʻatasia o loʻo taua i lalo: Faʻatasiga pito i luma (FEOL), lea o loʻo gaosia ai le photodetector ma le transistor i le taimi e tasi i luga o se mea faʻapipiʻi silicon e mafai ai ona faʻaogaina le vevela maualuga, ae faʻaogaina le vaʻa. Tuufaatasiga pito i tua (BEOL). Photodetectors e gaosia i luga o le uʻamea e aloese ai mai le faʻalavelave i le CMOS, ae faʻatapulaʻa i le faʻaitiitia o le vevela.

Ata 2: Talia ma le bandwidth o se faʻataʻitaʻiga maualuga Ge / Si photodetector

Fa'amatalaga nofoaga autu

O faʻamatalaga faʻataʻitaʻiga maualuga o se vaega autu i le isi augatupulaga o fesoʻotaʻiga nofoaga autu o faʻamatalaga. Talosaga autu e aofia ai: transceivers opitika:100G, 400G ma maualuga fua faatatau, faʻaaogaina PAM-4 modulation; Afa'ata'ita'i fa'ata'ita'i bandwidth maualuga(>50 GHz) e mana'omia.

Silicon-based optoelectronic integrated circuit: monolithic integration of detector with modulator ma isi vaega; Ose afi fa'akomepiuta, maualuga fa'atinoga.

Fa'asoa fa'ata'ita'iga: feso'ota'iga fa'apitoa i le va o fa'asoa fa'asoa, teuina, ma le teuina; Aveina le manaʻoga mo le malosi-mamafa, maualuga-bandwidth photodetectors.

 

Vaaiga i le lumana'i

O le lumanaʻi o faʻapipiʻiina optoelectronic high-speed photodetectors o le a faʻaalia ai faiga nei:

Tulaga maualuga o faʻamaumauga: Faʻatonuina le atinaʻeina o 800G ma 1.6T transceivers; E mana'omia ni fa'ata'ita'iga fa'atasi ai ma bandwidth e sili atu nai lo le 100 GHz.

Faʻaleleia le tuʻufaʻatasia: Tuʻufaʻatasiga puʻe tasi o mea III-V ma le silikoni; Fa'atekonolosi fa'atasi 3D maualuga.

Mea fou: Su'esu'eina mea e lua-dimensional (e pei o le graphene) mo le malamalama ultrafast malamalama; O se fa'amea fou a le Vaega IV mo le fa'alauteleina o le galu umi.

Talosaga fa'asolo mai: LiDAR ma isi fa'amatalaga fa'alogo o lo'o fa'aosoina le atina'eina o le APD; O fa'aoga photon microwave e mana'omia ai fa'ata'ita'iga fa'ata'i laina maualuga.

 

O faʻataʻitaʻiga faʻataʻitaʻiga maualuga, aemaise lava Ge poʻo Si photodetectors, ua avea ma avetaʻavale autu o optoelectronics faʻavae silicon ma isi augatupulaga o fesoʻotaʻiga mata. Faʻaauau le alualu i luma i meafaitino, mamanu masini, ma tekonolosi tuʻufaʻatasia e taua tele e faʻafetaui ai le faʻatupulaia o le bandwidth manaʻoga o nofoaga autu o faʻamatalaga i le lumanaʻi ma fesoʻotaʻiga fesoʻotaʻiga. Aʻo faʻaauau pea le faʻaleleia o le fanua, e mafai ona tatou faʻamoemoe e vaʻai i photodetectors e maualuga atu le bandwidth, maualalo le pisa, ma le faʻaogaina faʻatasi ma eletise eletise ma photonic circuits.


Taimi meli: Ian-20-2025